Evidence for oxygen vacancy manipulation in La1/3Sr2/3FeO3−𝜹 thin films via voltage controlled solid-state ionic gating

Reversible changes of the structural and electronic transport properties of La1/3Sr2/3FeO3-δ/Gd-doped CeO2 heterostructures arising from the manipulation of δ are presented. Thermally induced oxygen loss leads to a c-axis lattice expansion and an increase in resistivity in a La1/3Sr2/3FeO3-δ film capped with Gd-doped CeO2. In a three-terminal device where a gate bias is applied across the Gd-doped CeO2 layer to alter the La1/3Sr2/3FeO3-δ oxygen stoichiometry, the ferrite channel is shown to undergo a change in resistance of an order of magnitude using gate voltages of less than 1 V applied at 500 K. The changes in resistance remain upon cooling to room temperature, in the absence of a gate bias, suggesting solid state ionic gating of perovskite oxides as a promising platform for applications in non-volatile, multistate devices.