Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials
Source abstract
Abstract
Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10−5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.
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Research context
OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology 1 , No. 109 Deya Road, 410073 Changsha, People’s Republic of China
Low Temperature Laboratory, Department of Applied Physics, Aalto University 2 , Puumiehenkuja 2 B, 02150 Espoo, Finland
Laboratoire Pierre Aigrain, Ecole Normale Superieure-PSL Research University 3 , 24 Rue Lhomond, 75231 Paris, France
Funding
National Key R&D Program of China · National Natural Science Foundation of China · Academy of Finland
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