Electrical properties of chalcogenide glass of composition Ge8As32S60
Source abstract
Abstract
The results of the studies of the dielectrical and impedance spectra of chalcogenide glass samples of the Ge 8 As 32 S 60 composition in an AC field of a frequency range of 10 3 –10 6 Hz are presented. Intense relaxation processes are revealed in the samples under study and a dispersion of the electrical parameters corresponding to a relaxation time distribution by the contribution of dipole compositions, which arise with the participation of charged defect centers caused by the presence of arsenic atoms’ dangling bonds in the structure of chalcogenide semiconductor, is established. It is established that a low-frequency region of the complex impedance’s components of the parameter mentioned is associated with the electrical properties of the contact metal–vitreous semiconductor, while a high-frequency one is associated directly with the properties of the material under study.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Solid-state spectroscopy and crystallography · Glass properties and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (12)
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1. Bogoslovskiy, N.A. and Tsendin, K.D., Physics of switching and memory effects in chalcogenide glassy semiconductors, Semiconductors, 2012, vol. 46, no. 5, pp. 559–590.10.1134/S1063782612050065 ↗
2. Arsova, D., Bond arrangements and optical band gap in GexAs40-x S(Se)60 glasses and thin films, J. Phys. Chem. Solids, 1996, vol. 57, no. 9, pp. 1279–1283.10.1016/0022-3697(96)00319-8 ↗
3. Kim, T.I., Mikhailov, M.D., and Borisova, Z.U., The influence of copper and lead additives on the properties of glasses in the system As–Ge–X (X = S, Se, Te), Fiz. Khim. Stekla, 1985, vol. 11, no. 1, pp. 56–60.
4. Ananichev, V.A., Krylov, N.I., Baidakov, L.A., and Blinov, L.N., Glass formation and physicochemical properties of glasses in the Ge–Se–Br system, Glass Phys. Chem., 1997, vol. 23, no. 4, pp. 277–279.
5. Maslyuk, V.T., Skordeva, E., Puga, P.P., Arsova, D.A., and Pamukchieva, V., Concentration dependence of radiation-induced changes in the optical properties of GexAs40-x S60 films, Phys. Solid State, 2004, vol. 46, no. 8, pp. 1393–1397.10.1134/1.1788774 ↗
6. Phillips, J.C., Nanoscale arrangement in the GexAs40-x S(Se)60 systems, in Rigidity Theory and Applications, Thorpe, M.F. and Duxbury, P.M., Eds., New York: Kluwer Academic, 2000, p. 155.
7. Pamukchieva, V., Gonbeau, D., Guimon, M.F., Skordeva, E., Dedryvere, R., and Arsova, D., XPS study of photoand thermally-induced changes in amorphous GexAs40-x S(Se)60, Physica B: Condens. Matter., 2006, vol. 2, no. 371, pp. 302–308.10.1016/j.physb.2005.10.133 ↗
8. Avanesyan, V.T., Arsova, D.A., and Dzhamgozova, E.R., Electrical and physical properties of glassy semiconductors in the Ge–As–S system, in Materialy Mezhdunarodnoi nauchno–tekhnicheskoi konferentsii “Fundamental’nye problemy radioelektronnogo priborostroeniya (INTERMATIC–2013)” (Proceedings of the International Scientific and Technical Conference “Fundamental Problems of Radioelectronics (INTERMATIC–2013), December 2–6, 2013, Moscow), Academician Sigov, A.S., Ed., Moscow: Energoatomizdat, 2013, part 2, pp. 147–149.
9. Alo Dutta, Chandrahas Bharti, and Shinha, T.P., Dielectric relaxation and ac conductivity study in SrMg1/3Nb2/3O3, Indian J. Eng. Mater. Sci., 2008, vol. 15, no. 4, pp. 181–186.
10. Elliot, S.R., A.c. conduction in amorphous chalcogenide and pnictide semiconductors, Adv. Phys., 1987, vol. 36, pp. 135–217.10.1080/00018738700101971 ↗
11. Buet, F., Olivier-Fourcade, J., Bensimon, Y., and Belougne, P., Impedance study of chalcogenide glasses, Solid State Commun., 1991, vol. 77, no. 1, pp. 29–32.10.1016/0038-1098(91)90420-Z ↗
12. Bilanych, V.S., Makauz, I.I., Mel’nichenko, T.D., Rizak, I.M., and Rizak, V.M., Relaxation processes in glasses of the Ge–As–S system, Phys. Solid State, 2006, vol. 48, no. 11, pp. 2060–2064.10.1134/S1063783406110047 ↗