Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts
Source abstract
Abstract
In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are used as source and drain electrode. The electrical transport performance of the transistor is gated by compressive strains. The working mechanism is attributed to the Schottky barrier height changed under the coupling effect of piezoresistive and piezoelectric. Uniquely, the transistor turns off under the compressive stress of 806 nN. The strain-gated transistor is likely to have important applications in high resolution mapping device and MEMS devices.
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Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Gas Sensing Nanomaterials and Sensors · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing 1 , Beijing 100083, China
Department of Mechanical Engineering, School of Engineering, Tokyo Institute of Technology 2 , NE-3, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies 3 , Beijing 100083, China
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