Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
Source abstract
Abstract
The incorporation of In2O3 into Ga2O3 allows for tailoring of the bandgap over a wide range in (InxGa1−x)2O3, and this material is emerging as a candidate in transparent electrodes on optoelectronic devices, heterostructure transistors, photodetectors, and gas sensors. We have measured the band alignments for atomic layer deposited SiO2 and Al2O3 over the composition range x = 0.25–0.74 for (InxGa1−x)2O3 grown by pulsed laser deposition. The valence band offsets from 1.95 to 2.30 eV for SiO2 and 0.88 to 1.23 eV for Al2O3 over this composition range. The bandgaps of (InxGa1−x)2O3 spanned from 4.55 to 4.05 for x = 0.74–0.25. This led to nested band alignments for SiO2 and Al2O3 for the entire composition range of (InxGa1−x)2O3 investigated.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical Engineering, University of Florida 1 , Gainesville, Florida 32611, USA
Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik 2 , 04103 Leipzig, Germany
U.S. Naval Research Laboratory 3 , Washington, DC 20375, USA
Nanoscale Research Facility, University of Florida 4 , Gainesville, Florida 32611, USA
Department of Materials Science and Engineering, University of Florida 5 , Gainesville, Florida 32611, USA
Funding
National Science Foundation · Defense Threat Reduction Agency · Office of Naval Research · European Social Fund
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