Epitaxial integration of high-mobility La-doped BaSnO3 thin films with silicon
Source abstract
Abstract
La-doped BaSnO3 has been epitaxially integrated with (001) Si using an SrTiO3 buffer layer via molecular-beam epitaxy (MBE). A 254 nm thick undoped BaSnO3 buffer layer was grown to enhance the mobility of the overlying La-doped BaSnO3 layer. The x-ray diffraction rocking curve of the BaSnO3 002 peak has a full width at half maximum of 0.02°. At room temperature, the resistivity of the La-doped BaSnO3 film is 3.6 × 10−4 Ω cm and the mobility is 128 cm2 V−1 s−1 at a carrier concentration of 1.4 × 1020 cm−3. These values compare favorably to those of La-doped BaSnO3 films grown by all techniques other than MBE on single-crystal oxide substrates. Our work opens an exciting arena for integrating hyper-functional oxide electronics that make use of high-mobility oxide films with the workhorse of the semiconductor industry, silicon.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Applied and Engineering Physics, Cornell University 1 , Ithaca, New York 14853, USA
Department of Materials Science and Engineering, Cornell University 2 , Ithaca, New York 14853, USA
Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University 3 , Ithaca, New York 14853, USA
Kavli Institute at Cornell for Nanoscale Science 4 , Ithaca, New York 14853, USA
Funding
Cornell Nanoscale Facility, NNCI · National Science Foundation · Air Force Office of Scientific Research
References (95)
Show source-provided references
1. Appl. Phys. Express · 2012 · 5 · 06110210.1143/apex.5.061102 ↗
2. APL Mater. · 2017 · 5 · 11610710.1063/1.5001839 ↗
3. J. Am. Ceram. Soc. · 1997 · 80 · 215310.1111/j.1151-2916.1997.tb03102.x ↗
4. Appl. Phys. Lett. · 2012 · 100 · 17211210.1063/1.4709415 ↗
5. APL Mater. · 2015 · 3 · 06251010.1063/1.4921338 ↗
6. Phys. Status Solidi A · 2015 · 212 · 148710.1002/pssa.201532032 ↗
7. Nat. Commun. · 2017 · 8 · 1516710.1038/ncomms15167 ↗
8. Nat. Electron. · 2018 · 1 · 44210.1038/s41928-018-0117-x ↗
9. MRS Bull. · 2000 · 25 · 1510.1557/mrs2000.256 ↗
10. Thin Solid Films · 2007 · 515 · 600010.1016/j.tsf.2006.12.125 ↗
11. Annu. Rev. Mater. Res. · 2017 · 47 · 39110.1146/annurev-matsci-070616-124109 ↗
12. RSC Adv. · 2017 · 7 · 3270310.1039/c7ra05193j ↗
13. Science · 2017 · 356 · 16710.1126/science.aam6620 ↗
14. APL Mater. · 2015 · 3 · 03610110.1063/1.4913587 ↗
15. ACS Appl. Mater. Interfaces · 2018 · 10 · 2106110.1021/acsami.8b05229 ↗
16. Appl. Phys. Lett. · 2016 · 108 · 08350110.1063/1.4942366 ↗
17. Nat. Mater. · 2015 · 14 · 18210.1038/nmat4148 ↗
18. J. Ceram. Soc. Jpn. · 1995 · 103 · 109910.2109/jcersj.103.1099 ↗
19. IEEE Trans. Electron Devices · 1963 · 10 · 33810.1109/t-ed.1963.15245 ↗
20. Nano Lett. · 2008 · 8 · 40510.1021/nl071804g ↗
21. IEEE Trans. Electron Devices · 2005 · 52 · 28410.1109/ted.2004.842546 ↗
22. J. Appl. Phys. · 2007 · 101 · 10610510.1063/1.2736629 ↗
23. Appl. Phys. Lett. · 2014 · 105 · 05210410.1063/1.4891816 ↗
24. APL Mater. · 2016 · 4 · 01610610.1063/1.4939657 ↗
25. AIP Adv. · 2016 · 6 · 06530510.1063/1.4953808 ↗
26. Appl. Phys. Lett. · 2016 · 108 · 08210510.1063/1.4942509 ↗
27. J. Mater. Chem. C · 2017 · 5 · 573010.1039/c7tc00190h ↗
28. Appl. Phys. Lett. · 2018 · 112 · 23210210.1063/1.5033326 ↗
29. J. Phys. Chem. C · 2014 · 118 · 699410.1021/jp500100a ↗
30. J. Mater. Res. · 1996 · 11 · 275710.1557/jmr.1996.0350 ↗
31. Ogale · 2005 · 3110.1007/b136780 ↗
32. Appl. Phys. Lett. · 1991 · 59 · 78210.1063/1.105341 ↗
33. Jpn. J. Appl. Phys., Part 2 · 1995 · 34 · L68810.1143/jjap.34.l688 ↗
34. Appl. Phys. Lett. · 1994 · 65 · 103010.1063/1.113011 ↗
35. J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. · 2002 · 20 · 25710.1116/1.1434968 ↗
36. J. Vac. Sci. Technol., A · 2002 · 20 · 133210.1116/1.1482710 ↗
37. Phys. Rev. Appl. · 2016 · 5 · 05400610.1103/physrevapplied.5.054006 ↗
38. J. Cryst. Growth · 2011 · 334 · 12610.1016/j.jcrysgro.2011.08.040 ↗
39. Sci. Rep. · 2017 · 7 · 1320510.1038/s41598-017-13693-6 ↗
40. Appl. Phys. Lett. · 1991 · 58 · 229410.1063/1.104903 ↗
41. J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. · 2006 · 24 · 258610.1116/1.2362759 ↗
42. J. Appl. Phys. · 1987 · 61 · 239810.1063/1.337957 ↗
43. 1988 · 181
44. Appl. Phys. Lett. · 2005 · 86 · 05190110.1063/1.1857068 ↗
45. Appl. Phys. Lett. · 1989 · 55 · 36010.1063/1.102420 ↗
46. J. Appl. Phys. · 1985 · 58 · 240710.1063/1.335912 ↗
47. 2010 · 11
48. ECS Trans. · 2008 · 16 · 21310.1149/1.2981604 ↗
49. Appl. Phys. Lett. · 1993 · 63 · 53910.1063/1.109998 ↗
50. Appl. Phys. Lett. · 2001 · 79 · 67110.1063/1.1389509 ↗
51. Thompson · 1991 · 445
52. J. Appl. Phys. · 2006 · 99 · 07410510.1063/1.2188051 ↗
53. J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. · 2006 · 24 · 210510.1116/1.2216721 ↗
54. Appl. Phys. Lett. · 2003 · 83 · 97510.1063/1.1593832 ↗
55. Nat. Mater. · 2007 · 6 · 88210.1038/nmat2012 ↗
56. Appl. Phys. Lett. · 2000 · 77 · 13010.1063/1.126899 ↗
57. Phys. Status Solidi A · 2008 · 205 · 69510.1002/pssa.200723509 ↗
58. ECS J. Solid State Sci. Technol. · 2012 · 1 · N2410.1149/2.004206jss ↗
59. J. Cryst. Growth · 2005 · 277 · 49610.1016/j.jcrysgro.2005.02.015 ↗
60. J. Cryst. Growth · 2011 · 321 · 17110.1016/j.jcrysgro.2011.02.038 ↗
61. Appl. Phys. Lett. · 2008 · 92 · 07210110.1063/1.2841667 ↗
62. Appl. Phys. Lett. · 1988 · 52 · 132610.1063/1.99685 ↗
63. Jpn. J. Appl. Phys., Part 2 · 1988 · 27 · L140410.1143/jjap.27.l1404 ↗
64. J. Appl. Phys., Part 1 · 2003 · 94 · 91210.1063/1.1585116 ↗
65. Appl. Phys. Lett. · 2002 · 80 · 76610.1063/1.1445465 ↗
66. Appl. Phys. Lett. · 2013 · 102 · 01190610.1063/1.4772939 ↗
67. Microelectron. Eng. · 2007 · 84 · 227810.1016/j.mee.2007.04.113 ↗
68. Appl. Phys. Lett. · 2008 · 93 · 19210510.1063/1.3003872 ↗
69. Appl. Phys. Lett. · 2010 · 97 · 03191110.1063/1.3460272 ↗
70. J. Electrochem. Soc. · 1982 · 129 · 256910.1149/1.2123611 ↗
71. Jpn. J. Appl. Phys., Part 2 · 1991 · 30 · L141510.1143/jjap.30.l358 ↗
72. Phys. Rev. Lett. · 1998 · 81 · 301410.1103/physrevlett.81.3014 ↗
73. Appl. Phys. Lett. · 2003 · 83 · 521110.1063/1.1635966 ↗
74. Appl. Phys. Lett. · 2006 · 89 · 05350610.1063/1.2236464 ↗
75. J. Appl. Phys. · 2007 · 102 · 10410310.1063/1.2812425 ↗
76. Appl. Phys. Lett. · 2004 · 85 · 320510.1063/1.1806556 ↗
77. Acta Mater. · 2013 · 61 · 273410.1016/j.actamat.2012.09.073 ↗
78. Phys. Status Solidi RRL · 2014 · 8 · 91710.1002/pssr.201409383 ↗
79. J. Appl. Phys. · 2016 · 119 · 04530110.1063/1.4939760 ↗
80. Highly anisotropic distortion of epitaxial SrTiO3 films on silicon due to defects
81. Rep. Prog. Phys. · 2018 · 81 · 03650310.1088/1361-6633/aa892d ↗
82. Phys. Rev. B · 2012 · 86 · 16520510.1103/physrevb.86.165205 ↗
83. Appl. Phys. Lett. · 2014 · 105 · 20350310.1063/1.4901963 ↗
84. Appl. Phys. Lett. · 2016 · 109 · 26210210.1063/1.4973205 ↗
85. J. Appl. Phys. · 2003 · 93 · 452110.1063/1.1562001 ↗
86. Science · 2009 · 324 · 36710.1126/science.1169678 ↗
87. J. Vac. Sci. Technol., A · 1996 · 14 · 267710.1116/1.580185 ↗
88. Proc. Phys. Soc. · 1945 · 57 · 16010.1088/0959-5309/57/3/302 ↗
89. J. Mater. Chem. A · 2016 · 4 · 508810.1039/c5ta09744d ↗
90. J. Alloys Compd. · 2006 · 416 · 21410.1016/j.jallcom.2005.08.032 ↗
91. 1977
92. 1986 · 45
93. 2004 · 432
94. Solid State Sci. · 2010 · 12 · 63010.1016/j.solidstatesciences.2010.01.020 ↗
95. Mater. Res. Bull. · 1972 · 7 · 21310.1016/0025-5408(72)90239-5 ↗