Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping
Abstract
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials
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Affiliations
Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 1 , 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Research Center for Advanced Measurement and Characterization (RCAMC), National Institute for Materials Science (NIMS) 2 , 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan
PRESTO, Japan Science and Technology Agency 3 , 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
Tokyo University of Science 4 , 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
Research Center for Computational Design of Advanced Functional Materials, National Institute of Advanced Industrial Science and Technology (AIST) 5 , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Mathematics for Advanced Materials Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST) 6 , 2-1-1 Katahira, Aoba, Sendai, Miyagi 980-8577, Japan
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) 7 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 8 , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Funding
Japan Society for the Promotion of Science · Core Research for Evolutional Science and Technology · Precursory Research for Embryonic Science and Technology