Enhanced pyroelectric response at morphotropic and field-induced phase transitions in ferroelectric hafnium oxide thin films
Source abstract
Abstract
The hafnium oxide material class is characterized by the coexistence of several polymorphs between which phase transitions are induced by means of composition and external electric fields. Pyroelectric materials, which convert heat into electrical energy, exhibit the largest response at such morphotropic or field-induced phase transitions. The hafnium oxide material system is of special interest for pyroelectric applications since it allows for scalable and semiconductor-compatible fabrication. Here, we report large pyroelectric coefficients at the morphotropic transition from the ferroelectric orthorhombic to the centrosymmetric tetragonal phase. The electric field-induced transition between these two phases in doped HfO2 is found to yield large pyroelectric coefficients of up to −142 µCm−2 K−1, a value that is 20 times larger compared to AlN.
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Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Fraunhofer Institute for Photonic Microsystems 1 , 01099 Dresden, Germany
Institute of Applied Physics, Technische Universität Dresden 2 , 01062 Dresden, Germany
GLOBALFOUNDRIES Management Services LLC & Co. KG 3 , 01109 Dresden, Germany
Center of Excellence–Complexity and Topology in Quantum Matter ct.qmat, TU Dresden 4 , 01062 Dresden, Germany
Funding
Bundesministerium für Wirtschaft und Energie · Freistaat Sachsen
References (50)
Show source-provided references
1. Nature · 2020 · 580 · 47810.1038/s41586-020-2208-x ↗
2. ECS J. Solid State Sci. Technol. · 2013 · 2 · N6910.1149/2.010304jss ↗
3. Science · 2020 · 369 · 134310.1126/science.aba0067 ↗
4. Appl. Phys. Lett. · 2017 · 110 · 07290110.1063/1.4976519 ↗
5. Appl. Phys. Lett. · 2018 · 112 · 05290510.1063/1.5019308 ↗
6. 2012 · 25
7. IEEE Trans. Electron Devices · 2018 · 65 · 376910.1109/ted.2018.2856818 ↗
8. 2017 · T176
9. Adv. Mater. · 2015 · 27 · 181110.1002/adma.201404531 ↗
10. Thin Solid Films · 2013 · 533 · 8810.1016/j.tsf.2012.11.125 ↗
11. J. Appl. Phys. · 2020 · 127 · 06410510.1063/1.5128502 ↗
12. Nat. Mater. · 2018 · 17 · 109510.1038/s41563-018-0196-0 ↗
13. 2018 · 130
14. Energy Technol. · 2019 · 7 · 190051510.1002/ente.201900515 ↗
15. Appl. Phys. Lett. · 2020 · 117 · 04290310.1063/5.0012746 ↗
16. Appl. Phys. Lett. · 2011 · 99 · 10290310.1063/1.3634052 ↗
17. ACS Appl. Mater. Interfaces · 2018 · 10 · 4266610.1021/acsami.8b15576 ↗
18. 2019 · 7.4.1
19. Mater. Lett. · 1989 · 8 · 25310.1016/0167-577x(89)90115-8 ↗
20. J. Electroceram. · 1999 · 3 · 15110.1023/a:1009995126986 ↗
21. Phys. Rev. Appl. · 2019 · 12 · 03403210.1103/physrevapplied.12.034032 ↗
22. Appl. Phys. Lett. · 1996 · 68 · 373710.1063/1.115990 ↗
23. Appl. Phys. Lett. · 2013 · 103 · 19290410.1063/1.4829064 ↗
24. ACS Appl. Electron. Mater. · 2019 · 1 · 261210.1021/acsaelm.9b00591 ↗
25. J. Appl. Crystallogr. · 1969 · 2 · 6510.1107/s0021889869006558 ↗
26. Sci. Rep. · 2016 · 6 · 3293110.1038/srep32931 ↗
27. Nano Energy · 2020 · 74 · 10473310.1016/j.nanoen.2020.104733 ↗
28. Ferroelectrics · 1972 · 3 · 33310.1080/00150197208235326 ↗
29. 2009
30. J. Phys. Soc. Jpn. · 1963 · 18 · 147710.1143/jpsj.18.1477 ↗
31. Phys. Rev. B · 2014 · 90 · 06411110.1103/physrevb.90.064111 ↗
32. Appl. Phys. Lett. · 2015 · 106 · 16290510.1063/1.4919135 ↗
33. Appl. Phys. Lett. · 2021 · 118 · 01290410.1063/5.0026990 ↗
34. Phys. Rev. B · 2006 · 73 · 01411510.1103/physrevb.73.014115 ↗
35. Ferroelectrics · 1991 · 118 · 14310.1080/00150199108014755 ↗
36. Phys. Solid State · 2003 · 45 · 130510.1134/1.1594247 ↗
37. Phys. Solid State · 2006 · 48 · 10210.1134/s1063783406010203 ↗
38. Phys. Rev. Mater. · 2018 · 2 · 12440510.1103/physrevmaterials.2.124405 ↗
39. Nat. Mater. · 2018 · 17 · 43210.1038/s41563-018-0059-8 ↗
40. ACS Appl. Electron. Mater. · 2020 · 2 · 158310.1021/acsaelm.0c00184 ↗
41. Appl. Phys. Lett. · 2013 · 103 · 18290610.1063/1.4828675 ↗
42. Appl. Phys. Lett. · 2006 · 88 · 13290810.1063/1.2191413 ↗
43. Adv. Mater. · 2014 · 26 · 819810.1002/adma.201403115 ↗
44. J. Appl. Phys. · 2017 · 122 · 14410510.1063/1.4989908 ↗
45. J. Vac. Sci. Technol. B · 2019 · 37 · 02140110.1116/1.5060738 ↗
46. J. Mater. Chem. C · 2018 · 6 · 982810.1039/c8tc02686f ↗
47. Aging in ferroelectric Si-doped hafnium oxide thin films10.1002/pssr.202100023 ↗
48. 2020 · 26.3.1
49. J. Appl. Phys. · 1982 · 53 · 898010.1063/1.330455 ↗
50. J. Appl. Phys. · 1982 · 53 · 897410.1063/1.330454 ↗