journal article·2020-01-01Open access

Fully transparent field-effect transistor with high drain current and on-off ratio

Jisung Park, Hanjong Paik, Kazuki Nomoto, Kiyoung Lee, Bo-Eun Park, Benjamin Grisafe, Li-Chen Wang, Sayeef Salahuddin, Suman Datta, Yongsung Kim, Debdeep Jena, Huili Grace Xing, Darrell G. Schlom

APL Materials· Volume 8· Issue 1

Abstract

We report a fully transparent thin-film transistor utilizing a La-doped BaSnO3 channel layer that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5 × 108. The La-doped BaSnO3 channel is grown on a 100–150 nm thick unintentionally doped BaSnO3 buffer layer on a (001) MgO substrate by molecular-beam epitaxy. Unpatterned channel layers show mobilities of 127–184 cm2 V−1 s−1 at carrier concentrations in the low to mid 1019 cm−3 range. The BaSnO3 is patterned by reactive ion etching under conditions preserving the high mobility and conductivity. Using this patterning method, a sub-micron-scale thin film transistor exhibiting complete depletion at room temperature is achieved.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Diamond and Carbon-based Materials Research · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Material Science and Engineering, Cornell University 1 , Ithaca, New York 14853, USA

Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University 2 , Ithaca, New York 14853, USA

School of Electrical and Computer Engineering, Cornell University 3 , Ithaca, New York 14853, USA

Nano Electronics Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics 4 , 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea

Department of Electrical Engineering, University of Notre Dame 5 , Notre Dame, Indiana 46556, USA

Department of Electrical Engineering and Computer Sciences, University of California 6 , Berkeley, California 94720, USA

Kavli Institute at Cornell for Nanoscale Science 7 , Ithaca, New York 14853, USA

Funding

National Science Foundation · Air Force Office of Scientific Research · Semiconductor Research Corporation

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