Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures
Source abstract
Abstract
Epitaxial multilayer heterostructures of ScxAl1−xN/GaN with Sc contents x = 0.11–0.45 are found to exhibit significant differences in structural quality, chemical impurity levels, and electronic properties depending on the starting Sc source impurity levels. A higher purity source leads to a 2–3 orders of magnitude reduction in the carbon, oxygen, and fluorine unintentional doping densities in MBE-grown ScxAl1−xN/GaN multilayers. Electrical measurements of ScxAl1−xN/n+GaN single heterostructure barriers show a 5–7 orders of magnitude reduction in the electrical leakage for films grown with a higher purity Sc source at most Sc contents. The measured chemical and electrical properties of epitaxial ScxAl1−xN highlight the importance of the starting Sc source material purity for epitaxial device applications that need these highly piezoelectric and/or ferroelectric transition-metal nitride alloys.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Cornell University 1 , Ithaca, New York 14853, USA
School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853, USA
Department of Physics, Cornell University 3 , Ithaca, New York 14853, USA
School of Applied and Engineering Physics, Cornell University 4 , Ithaca, New York 14853, USA
Division of Materials Sciences and Engineering, Ames Laboratory 5 , Ames, Iowa 50011, USA
Kavli Institute at Cornell for Nanoscale Science, Cornell University 6 , Ithaca, New York 14853, USA
Funding
Defense Advanced Research Projects Agency · National Science Foundation · Air Force Office of Scientific Research
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