journal article·2017-03-01Open access

HgCdTe-based heterostructures for terahertz photonics

S. Ruffenach, A. Kadykov, V. V. Rumyantsev, J. Torres, D. Coquillat, D. But, S. S. Krishtopenko, C. Consejo, W. Knap, S. Winnerl, M. Helm, M. A. Fadeev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, F. Teppe

APL Materials· Volume 5· Issue 3

Abstract

Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahertz photoconductive response close to the charge neutrality point and at the magnetic field driven topological phase transition. We also show the ability of these heterostructures to be used as terahertz imagers. Regarding terahertz emitters, we present results on stimulated emission of HgCdTe heterostructures in their conventional semiconductor state above 30 THz, discussing the physical mechanisms involved and promising routes towards the 5–15 THz frequency domain.
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Research context

OpenAlex topics: Topological Materials and Phenomena · Terahertz technology and applications · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

University of Montpellier 1 Laboratoire Charles Coulomb, UMR CNRS 5221, , Montpellier 34095, France

Institute for Physics of Microstructures of Russian Academy of Sciences 2 , 603950 Nizhny Novgorod, Russia

Lobachevsky State University of Nizhny Novgorod 3 , 603950 Nizhny Novgorod, Russia

University of Montpellier 4 Institut d’Electronique et des Systèmes (IES), UMR 5214 CNRS, , Montpellier 34095, France

Helmholtz-Zentrum Dresden− Rossendorf 5 Institute of Ion Beam Physics and Materials Research, , D−01328 Bautzner Landstraße, Dresden, Germany

Technische Universität Dresden 6 , D-01062 Dresden, Germany

Siberian Branch of Russian Academy of Sciences 7 A. V. Rzhanov Institute of Semiconductor Physics, , 630090 Novosibirsk, Russia

Novosibirsk State University 8 , 630090 Novosibirsk, Russia

Funding

European Cooperation in Science and Technology · Russian Foundation for Basic Research · Centre National de la Recherche Scientifique

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