Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
Source abstract
Abstract
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanoribbons (GNRs), the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors and remain potential candidates for electronic switching devices.
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Research context
OpenAlex topics: Graphene research and applications · Thermal properties of materials · Carbon Nanotubes in Composites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Notre Dame 1 Department of Electrical Engineering, , Notre Dame, Indiana 46556, USA
Korea Aerospace University 2 Department of Materials Engineering, , Goyang City, Gyeonggi-do 412791, South Korea
U. S. Naval Research Laboratory 3 , Washington, DC 20375, USA
Texas A&M University 4 Department of Materials Science and Engineering, , College Station, Texas 77843, USA
Pennsylvania State University 5 Materials Science and Engineering & Center of 2D & Layered Materials, , University Park, Pennsylvania 16802, USA
IBM T. J. Watson Research Center 6 , Yorktown Heights, New York 10598, USA
Funding
Nanoelectronics Research Initiative · NIST · Semiconductor Research Corporatio
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