journal article·2007-08-01

Atomic-Level Simulation of Ferroelectricity in Oxides: Current Status and Opportunities

Simon R. Phillpot, Susan B. Sinnott, Aravind Asthagiri

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Abstract

Atomic-level simulations are providing powerful insights into the properties of ferroelectric materials. In particular, we illustrate the effect of the strong coupling among the dipole moment, strain, and microstructure (both physical and chemical) in thin films, nanostructures, superlattices, and solid solutions of ferroelectrics. We assess the domain of validity of the atomic-level approach relative to other theoretical and computational approaches. We identify the strengths and weaknesses of the current generation of interatomic potentials and suggest strategies for improving their performance. We also identify application areas in which atomic-level simulation promises to play an important role.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, 2Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611;

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