Standby magnetic immunity calculator for STT-MRAM

This work investigates the impact of external magnetic fields, field orientation, temperature, and exposure time on the standby magnetic immunity (SMI) of spin-transfer torque magnetoresistive random-access memory. Wafer-level measurements were performed using a 3D vector magnet, ensuring uniform magnetic fields on unpackaged and unshielded wafers. The analytical model, used to predict the SMI safety field for long-term exposure, has been validated against hardware data and micromagnetic simulations. Furthermore, we introduce a machine-learning-based SMI calculator that provides a fast, automated estimation of the safety field for complex mission profiles. This approach bridges physics-based modeling and data-driven prediction, providing a practical tool for estimating the SMI of MRAM for automotive and other safety-critical environments.