MOCVD growth of high-performance extended short-wave infrared photodetectors
Source abstract
Abstract
In0.83Ga0.17As extended short-wavelength infrared (eSWIR) photodetectors were fabricated via metal-organic chemical vapor deposition (MOCVD) employing a step-graded buffer to accommodate lattice mismatches. Material characterization and device performance demonstrated the successful fabrication of high-performance eSWIR photodetectors via MOCVD. In0.83Ga0.17As material characterization revealed a 406 arcsec full width at half maximum (FWHM) in the x-ray diffraction (XRD) rocking curve and a relaxation degree of 93.7%. Transmission electron microscopy (TEM) further confirmed that the absorber region is free of dislocations, indicating high crystalline quality. Under 200 K, the device’s dark current density (J) reached 5.33 × 10−8 A/cm2 at −10 mV bias, which corresponded to a specific detectivity (D*) of 2.19 × 1012 cm Hz1/2/W at 2.3 μm. At room temperature (300 K), J increased to 2.16 × 10−4 A/cm2, with a corresponding D* of 9.1 × 1010 cm Hz1/2/W.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology 1 , Beijing 100124,
State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 2 , Beijing 100083,
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences 3 , Beijing 100049,
Zhongshan Uniwatt Technology CO., Ltd 4 , Zhongshan 528437,
Southwest Institute of Technical Physics 5 , Chengdu 610041,
Funding
National Natural Science Foundation of China
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