Memory resistor based on GaAs 2D-bilayers
Source abstract
Abstract
Resonant tunneling between closely spaced two dimensional electron gases is a single particle phenomenon that has sparked interest for decades. High tunneling conductances at equal electron densities are observed whenever the Fermi levels of the two quantum wells align. Detuning the Fermi levels out of the resonant 2D–2D tunneling regime causes a negative differential resistance. The negative differential resistance leads to a hysteresis when the device is operated in a current driven mode, allowing a bilayer system to function as a volatile memory resistor.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory for Solid State Physics, ETH Zürich 1 , CH-8093 Zürich,
Quantum Center, ETH Zürich 2 , CH-8093 Zürich,
Funding
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung · National Center of Competence in Research Quantum Science and Technology
References (26)
Show source-provided references
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