Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator
Source abstract
Abstract
The RF performance of gate recessed MISHFET devices with an amorphous AlN layer was investigated by small-signal (S-parameter) measurements. They reveal current gain and unilateral power gain cutoff frequencies of 125 and 138 GHz, respectively. These device parameters were achieved for gate recessed MISHFET devices after applying a selective “step by step” etching T-gate formation procedure. The results indicate that the combination of an amorphous AlN dielectric layer with the gate recessed AlGaN/GaN MISHFET structures affects the RF performance in devices prepared for high frequency operation advantageously.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Electrical Engineering, Slovak Academy of Sciences 1 , Dúbravská cesta 9, Bratislava,
Jülich-Aachen Research Alliance, Fundamentals of Future Information Technology 2 , 52425 Jülich,
Ernst Ruska-Centre (ER-C-2), Forschungszentrum Jülich 3 , 52425 Jülich,
Funding
Vedecká Grantová Agentúra MŠVVaM SR a SAV · Agentúra na Podporu Výskumu a Vývoja
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