The time dependence of electrical current of Ar ion-etched ZnO
Source abstract
Abstract
The time dependence of electrical current of Ar ion-etched ZnO is studied. It is found that Ar ion etching is beneficial for introducing vacancy defects such as the oxygen vacancy and zinc vacancy. At a high enough electrical bias voltage, there is an abrupt increase in electrical current with increasing bias voltage time, indicating the growth and formation of a conducting filament. The light illumination has proved to be helpful for filament formation and growth. A quantified relation between the electrical current and time is obtained. The filament growth mechanism can be ascribed to nucleation and growth of a new phase, which is determined by the Johnson–Mehl–Avrami equation.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics, University of Electronic Science and Technology of China , Chengdu 611731,
Funding
National Natural Science Foundation of China · the Agricultural Public Welfare of Project of Sichuan · the Fundamental Research Funds for the Central University
References (26)
Show source-provided references
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