journal article·2025-01-01Open access

Simulation investigation of a Ka-band phase-locked klystron-type coaxial relativistic Cherenkov generator

Yunxiao Zhou, Jinchuan Ju, Wei Zhang, Dian Zhang, Ying Li, Tengfang Wang, Fugui Zhou, Zhuang Yu, Hongtao Yao, Jun Zhang

AIP Advances· Volume 15· Issue 1

Abstract

To achieve coherent power combination of Ka-band high-power microwave (HPM), a phase-locked klystron-type coaxial relativistic Cherenkov generator (PKC-RCG), which combines the advantageous characteristics of weak dimensional sensitivity of RCG and low input power ratio of relativistic triaxial klystron amplifier (TKA), is proposed and investigated in this paper. The PKC-RCG is composed of two parts: a pre-modulation region adapted from TKA and an energy exchange region adapted from RCG. The pre-modulation region is used for initial speed modulation of intense relativistic electron beams (IREB), ensuring that the output frequency is consistent with the input frequency. The energy exchange region is used for deep clustering of the IREB and achieving efficient beam–wave energy conversion. Phase locking of the output HPM is accomplished through phase delivery of the modulated IREB. Specially designed reflectors and cascaded single-gap bunching cavities with active suppression of asymmetric TM mode are employed in the pre-modulation region to suppress energy coupling and achieve a lower input power ratio. Disk-loaded slow-wave structure with smooth inner conductor is employed in the energy exchange region to further decrease the dimensional sensitivity of RCG. By the proposed Ka-band PKC-RCG, an HPM with a power of 550 MW and a frequency of 29.0 GHz is obtained with ohmic loss being taken into account. Moreover, the input power ratio and phase-locking bandwidth of the proposed Ka-band PKC-RCG are −51.4 dB and 30 MHz, respectively.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Gyrotron and Vacuum Electronics Research · Microwave Engineering and Waveguides · Pulsed Power Technology Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Advanced Interdisciplinary Studies, National University of Defense Technology , Changsha 415073,

Funding

HuXiang Young Elite Program · National University of Defense Technology · National Natural Science Foundation of China

References (33)

Show source-provided references
1. 2006
2. J. Phys. D: Appl. Phys. · 2017 · 50 · 04300110.1088/1361-6463/50/4/043001 ↗
3. 2021
4. Results Phys. · 2021 · 27 · 10448710.1016/j.rinp.2021.104487 ↗
5. 2015
6. 2008
7. AIP Conf. Proc. · 2003 · 691 · 14110.1063/1.1635115 ↗
8. IEEE Electron Device Lett. · 2022 · 43 · 28410.1109/led.2021.3137927 ↗
9. Sci. Rep. · 2016 · 6 · 3065710.1038/srep30657 ↗
10. Phys. Plasmas · 2019 · 26 · 03310710.1063/1.5086734 ↗
11. Phys. Rev. Lett. · 2023 · 130 · 08500210.1103/physrevlett.130.085002 ↗
12. IEEE Electron Device Lett. · 2022 · 43 · 217310.1109/led.2022.3212092 ↗
13. Phys. Plasmas · 2018 · 25 · 04311610.1063/1.5006417 ↗
14. 2019
15. Phys. Plasmas · 2018 · 25 · 03310910.1063/1.5022808 ↗
16. Phys. Plasmas · 2017 · 24 · 10311110.1063/1.4992063 ↗
17. IEEE Trans. Electron Devices · 2014 · 61 · 425310.1109/ted.2014.2361531 ↗
18. IEEE Trans. Plasma Sci. · 2020 · 48 · 192310.1109/tps.2020.2980084 ↗
19. AIP Adv. · 2020 · 10 · 11511910.1063/5.0022255 ↗
20. AIP Adv. · 2019 · 9 · 10311110.1063/1.5121004 ↗
21. IEEE Trans. Plasma Sci. · 2009 · 37 · 200210.1109/tps.2009.2026477 ↗
22. 2009
23. IEEE Electron Device Lett. · 2017 · 38 · 27010.1109/led.2016.2646679 ↗
24. Phys. Plasmas · 2017 · 24 · 12311810.1063/1.5011057 ↗
25. Phys. Plasmas · 2017 · 24 · 02212510.1063/1.4976992 ↗
26. J. Appl. Phys. · 1963 · 34 · 243010.1063/1.1702760 ↗
27. 2007
28. Phys. Rev. Lett. · 1994 · 72 · 373010.1103/physrevlett.72.3730 ↗
29. IEEE Trans. Electron Devices · 2022 · 69 · 705910.1109/ted.2022.3217760 ↗
30. Phys. Plasmas · 2014 · 21 · 10310810.1063/1.4900408 ↗
31. IEEE Trans. Plasma Sci. · 2000 · 28 · 79810.1109/27.887728 ↗
32. J. Appl. Phys. · 2012 · 111 · 02330210.1063/1.3671537 ↗
33. IEEE Trans. Electron Devices · 2019 · 66 · 496410.1109/ted.2019.2942963 ↗