Electron transport in quasi-ballistic FETs subjected to a magnetic field
Source abstract
Abstract
We report the study of quasi-ballistic electron transport in short FETs subjected to magnetic field. Spatial distributions of electron concentrations, velocities, Hall currents, and voltages in the short FET channels are determined. The basic properties of current–voltage characteristics of quasi-ballistic FETs in magnetic field are analyzed, among them the kink-like characteristics of the near-ballistic device. Peculiarities of magnetoresistance of such FETs are studied for low and high magnetic fields and different current regimes. For nonlinear current regimes, we revealed significantly larger magnetoresistance for the devices with higher ballisticity. Numerical estimates of studied effects are presented. We suggest that the found results contribute to the physics of short FETs and can be used for developing nanoscale devices for particular applications.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine 1 , Kyiv 03028,
Institute of High Pressure Physics, Polish Academy of Sciences 2 , Warsaw 01-142,
Funding
Polish Academy of Sciences
References (24)
Show source-provided references
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