DC to GHz measurements of a near-ideal 2D material: P+ monolayers
Source abstract
Abstract
P+ monolayers in Si are of great scientific and technological interest, both intrinsically as a material in the “ideal vacuum” of crystalline Si and because they are showing great promise as qubits of electron and nuclear spin. The GHz complex conductivity σ(ω) can allow one to elucidate basic physical properties and is also important for fast devices, but measuring σ(ω) in 2D materials has not been easy. We report on such measurements, including showing (i) qualitatively a lack of any resonances up to 5 GHz (indicating no energy splittings below about 0.02 meV); and (ii) the quantitatively ideal Drude behavior of this novel material up to 5 GHz, showing a lower bound on the scattering rate of about 2 × 1010 s−1. We also discuss deconvolving the confounding effect of the distributed resistance and capacitance of the monolayer.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Quantum and electron transport phenomena · Topological Materials and Phenomena · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Institute of Standards and Technology 1 , Gaithersburg, Maryland 20899, USA
Department of Physics and Astronomy, Howard University 2 , Washington, District of Columbia 20059, USA
References (12)
Show source-provided references
1. Atom-by-atom fabrication of single and few dopant quantum devices10.1002/adfm.201903475 ↗
2. Suppressing segregation in highly phosphorus doped silicon monolayers10.1021/acsnano.5b06299 ↗
3. Digital atomic scale fabrication an inverse Moore’s law—A path to atomically precise manufacturing10.1016/j.mne.2018.11.001 ↗
4. A two-qubit gate between phosphorus donor electrons in silicon10.1038/s41586-019-1381-2 ↗
5. Coherent control of a donor-molecule electron spin qubit in silicon10.1038/s41467-021-23662-3 ↗
6. Broadband microwave electrical transport spectroscopy for two-dimensional material systems10.1063/5.0087285 ↗
7. Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers10.1039/c7nr07777g ↗
8. Surface conductivity measurements by a capacitive coupling technique10.1063/1.333031 ↗
9. Transport scattering time probed through rf admittance of a graphene capacitor10.1103/physrevb.83.125408 ↗
10. rf quantum capacitance of the topological insulator Bi2Se3 in the bulk depleted regime for field-effect transistors10.1103/physrevapplied.9.024022 ↗
11. Erratum: Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy [Rev. Mod. Phys. 83, 543 (2011)]10.1103/RevModPhys.89.029901 ↗
12. 1976