Ionic liquid gating of YBa2Cu3O7−x with a BN capping layer for enhanced stability and efficiency
Source abstract
Abstract
In this study, we explored the impact of ionic liquid gating on YBa2Cu3O7−x superconductivity. We observed that direct contact of YBa2Cu3O7−x and the ionic liquid N-diethyl-N-methyl-N-(2methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI) results in irreversible electrochemical reactions, despite the application of a relatively low gate voltage at 220 K. Capping a thin layer of boron nitride (BN) on YBa2Cu3O7−x enabled a reversible modulation of carrier density at 300 K. Benefiting from the higher ion mobility of ionic liquid at 300 K, this modification led to more than a one-time increase in carrier density, a 3-time improvement in voltage modulation efficiency, and a reversible tuning of the superconducting temperature. These findings suggest that using a BN capping layer holds promise for enhancing the stability and efficiency of devices using ionic liquid gating.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Ionic liquids properties and applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology 1 , Shenzhen 518055, People’s Republic of China
Shenzhen Key Laboratory of Flexible Printed Electronics Technology, Harbin Institute of Technology 2 , Shenzhen 518055, People’s Republic of China
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology 3 , Harbin 150001, People’s Republic of China
Funding
Natural Science Foundation of China · Shenzhen Science and Technology Program
References (25)
Show source-provided references
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