Optical gain calculation and structure optimization of type-II GaAsSb/InAs/InGaAs quantum well heterostructures
Source abstract
Abstract
This paper reports an optimization scheme of type-II GaAsSb/InAs/InGaAs quantum wells using the six bands k · p method. By calculating the optical gain, the optimal structures of the quantum wells are obtained. We observed that without an electric field, the thickness values of symmetrical quantum wells designed by the AdaGrad algorithm are 2.97, 2.81, and 6.21 nm, respectively, and the gain intensity is 6489 cm−1 that is about 1600 cm−1 higher than the original empirical design scheme. The thickness of asymmetric quantum wells designed by the Adam algorithm is 5.56, 2.72, 1.88, 3.16, and 2.46 nm under the external electric field of 75 kV/cm, respectively, and the gain intensity is 5729 cm−1 that is about 2300 cm−1 higher than the original empirical design scheme. The optimized scheme effectively suppresses the gain attenuation caused by the electric field and is helpful to improve the performance of interband cascade lasers.
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Research context
OpenAlex topics: Spectroscopy and Laser Applications · Semiconductor Lasers and Optical Devices · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Information and Electrical Engineering, Hangzhou City University 1 , Hangzhou 310015, People’s Republic of China
College of Information Science and Electronic Engineering, Zhejiang University 2 , Hangzhou 310027, People’s Republic of China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province
References (31)
Show source-provided references
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