Optical and structural properties of InGaN/GaN quantum well green laser diodes with AlGaN interlayer
Source abstract
Abstract
Scanning transmission electron microscope and temperature-dependent photoluminescence were used to study the effects of AlGaN interlayer (IL) following InGaN quantum wells (QWs) on the structural and optical properties of InGaN green laser diodes (LDs) grown on c-plane GaN substrate. It is found that AlGaN IL improves InGaN QW interface sharpness, whereas it does not suppress the localization effect, and moreover, it leads to increasing nonradiative recombination centers in the active region of green InGaN LD. We believe AlGaN IL has advantages and disadvantages to green InGaN LD structures. The advantage is to suppress indium (In) surface segregation, but the disadvantage is that it covers In-rich clusters, which evolve into dark spots during the growth of p-type layers of green LD structures.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026, China
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123, China
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 3 , Suzhou 215123, China
Funding
National Natural Science Foundation of China · National Key Research and Development Program of China · Jiangsu Provincial Key Research and Development Program
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