journal article·2022-10-01Open access

Effect of stacking type and magnetic moment in spin-valley polarized MoS2–MoSe2 heterobilayers

Yanwei Wu, Tao Liu, Ning Hao, Mingsheng Long, Min Zhang, Qingqing Sun, Lei Shan

AIP Advances· Volume 12· Issue 10

Abstract

In this work, we focused on engineering the bandgap of the MoS2–MoSe2 heterobilayer via either stacking type or induced magnetic moment with the aid of density functional theory. We have computed the electronic properties of different stacking MoS2–MoSe2 heterobilayers and their magnetization components, in which all situations retain spin-valley locking. Calculations show that different stacking types can cause a bandgap change of a maximum of 0.1 eV. On the other hand, a micro-enhanced magnetic moment in the heterobilayer increases the bandgap (in some cases, there are changes close to 0.3 eV) significantly. Results suggest that the stacking type and induced magnetic moment make MoS2–MoSe2 heterobilayers potential candidates for valleytronics applications. This study provides a new pathway in tuning spin-valley polarization of valleytronics devices.
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Research context

OpenAlex topics: 2D Materials and Applications · Heusler alloys: electronic and magnetic properties · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University 1 , 111 Jiu Long Road, Hefei 230601, China

Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences 2 , Hefei 230031, China

College of Data Science, Jiaxing University 3 , Jiaxing 314001, China

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University 4 , No. 220 Handan Road, Shanghai 200433, China

Funding

National Natural Science Foundation of China · University Synergy Innovation Program of Anhui Province · Fund of Anhui Provincial Natural Science Foundation · New Magnetoelectric Materials and Devices, The Recruitment Program for Leading Talent Team of Anhui Province 2020, State Key Laboratory of Luminescence and Applications · Jiaxing Science and Technology Project · Open Fund of Infrared and Low-Temperature Plasma Key Laboratory of Anhui Province

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