Atomic-resolved structural and electric field analysis of the passivation interface of MIS-HEMTs

Jiahui Zhang; Xujun Su; Yutao Cai; Didi Li; Luhua Wang; Jingjing Chen; Xionghui Zeng; Jianfeng Wang; Ke Xu

doi:10.1063/5.0087659

journal article·2022-04-01Open access

Atomic-resolved structural and electric field analysis of the passivation interface of MIS-HEMTs

Jiahui Zhang, Xujun Su, Yutao Cai, Didi Li, Luhua Wang, Jingjing Chen, Xionghui Zeng, Jianfeng Wang, Ke Xu

AIP Advances· Volume 12· Issue 4

Publisher page Open full text

Source abstract

Abstract

The passivation interfaces of GaN-based MIS-HEMTs with Si3N4 and ZrO2/Si3N4 bilayers were investigated through atomic resolution scanning transmission electron microscope–energy dispersive spectroscopy–differential phase contrast microscopy methods. It is found that the Si3N4/GaN interface exhibits atomic disorder fluctuation, and the GaN surface is discontinuous at the depth of 1–2 atomic layers. An oxide layer of ∼2 nm is formed at the ZrO2/GaN interface, and the GaN surface is atomically flat. Furthermore, the local minimum of the potential is located at the Si3N4/GaN interface, while it is distributed in the GaN side at the ZrO2/GaN interface. The electric field or potential distribution is affected by the crystal orientation of the polycrystalline ZrO2 layer. Finally, the difference in passivation mechanism is discussed.

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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Suzhou Institute of Nano-Tech and Nano-Bionics, CAS 1 , Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215123, China

School of Physical Science and Technology, ShanghaiTech University 2 , Middle Huaxia Road 393, Pudong, Shanghai 201210, China

Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University 3 , Suzhou 215123, China

Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors 4 , Jinji Lake Avenue 99, Suzhou Industrial Park, Suzhou 215000, China

Funding

The National Natural Science Foundation of China · The National Key R&D Program of China · 2020 Key R&D Program-Industry Foresight and Key Core Technologies of Jiangsu Province

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