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journal article·2022-03-01Open access

Electron spin resonance in a proximity-coupled MoS2/graphene van der Waals heterostructure

Chithra H. Sharma, Pai Zhao, Lars Tiemann, Marta Prada, Arti Dangwal Pandey, Andreas Stierle, Robert H. Blick

AIP Advances· Volume 12· Issue 3
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Source abstract

Abstract

Coupling graphene’s excellent electron and spin transport properties with a higher spin–orbit coupling (SOC) material allows tackling the hurdle of spin manipulation in graphene due to the proximity to van der Waals layers. Here, we use magneto-transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5 K. The electron spin resonance measurements are performed in the frequency range of 18–33 GHz, which allows us to determine the g-factor in the system. We measure the average g-factor of 1.91 for our hybrid system, which is a considerable shift compared to that observed in graphene on SiO2. This is a clear indication of proximity induced SOC in graphene in accordance with theoretical predictions.
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Research context

Nanomaterials

OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Advanced Physical and Chemical Molecular Interactions

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center of Hybrid Nanostructures (CHyN), Department of Physics, Universität Hamburg 1 , Luruper Chaussee 149, 22761 Hamburg, Germany

Institute of Microsystems Technology, Hamburg University of Technology 2 , 21703 Hamburg, Germany

Institute for Theoretical Physics, Universität Hamburg, HARBOR 3 , Luruper Chaussee 149, 22761 Hamburg, Germany

Centre for X-ray and Nano Science CXNS, Deutsches Elektronen-Synchrotron DESY 4 , Hamburg, Germany

Materials Science and Engineering, University of Wisconsin-Madison 5 , University Ave. 1550, Madison, Wisconsin 53706, USA

Funding

Deutsche Forschungsgemeinschaft · Partnership for Innnovation Education and Research · Alexander von Humboldt-Stiftung

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