Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier
Source abstract
Abstract
The synergistic effect of enhanced low dose rate sensitivity and single-event transients (SETs) in the bipolar dual operational amplifier LM158 is studied. The test results show a significant reduction in the SET amplitude and broadening in the SET waveform upon exposure to total ionizing dose radiation. These results are much more prominent for a low dose rate (LDR) irradiation of 0.01 rad(Si)/s than for a high dose rate irradiation of 10 rad(Si)/s. The greater gain degradation in the LM158 with LDR irradiation could be the direct cause of the reduction in the SET amplitude and broadening in the SET waveform, and this is corroborated through HSPICE simulations.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Radiation Effects in Electronics · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Key Laboratory of Electronic Information Material and Device, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences 1 , Urumqi 830011, China
School of Physical Science and Technology, Xinjiang University 2 , Urumqi 830046, China
University of Chinese Academy of Sciences 3 , Beijing 100049, China
Funding
National Natural Science Foundation of China · West Light Foundation of the Chinese Academy of Sciences
References (22)
Show source-provided references
1. Response of advanced bipolar processes to ionizing radiation10.1109/23.124115 ↗
2. Saturation of the dose-rate response of bipolar transistors below 10 rad(SiO2)/s: Implications for hardness assurance10.1109/23.340625 ↗
3. Total dose effects in conventional bipolar transistors and linear integrated circuits10.1109/23.340598 ↗
4. Total ionizing dose effects in bipolar devices and circuits10.1109/tns.2003.813133 ↗
5. Dependence of total dose response of bipolar linear microcircuits on applied dose rate10.1109/23.340614 ↗
6. ELDRS in bipolar linear circuits: A review10.1109/tns.2008.2011485 ↗
7. Observation of single event upsets in analog microcircuits10.1109/23.273472 ↗
8. Total dose effects on error rates in linear bipolar systems
9. The effects of low dose-rate ionizing radiation on the shapes of transients in the L>M124 operational amplifier10.1109/tns.2008.2007952 ↗
10. Development of a new methodology to model the synergistic effects between TID and ASETs10.1109/tns.2010.2042616 ↗
11. Modeling and investigations on TID-ASETs synergistic effect in LM124 operational amplifier from three different manufacturers10.1109/tns.2013.2280294 ↗
12. The role of feedback resistors and TID effects in the ASET response of a high speed current feedback amplifier10.1109/tns.2014.2369347 ↗
13. Using a temperature-switching approach to evaluate low-dose-rate ionizing radiation effects on SET in linear bipolar circuits10.1109/tns.2019.2908959 ↗
14. Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM13910.1080/00223131.2018.1539352 ↗
15. Study and modeling of the impact of TID on the ATREE response in LM124 operational amplifier10.1109/tns.2014.2306211 ↗
16. Accelerated irradiation method to study synergy effects in bipolar integrated circuits10.1109/tns.2009.2015313 ↗
17. 2013
18. 2007
19. ELDRS characterization up to 100 krad of Texas instruments’ dual amplifier LM158
20. Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation10.1109/tns.2006.885375 ↗
21. Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures10.1109/tns.2004.839258 ↗
22. Physical model for enhanced interface-trap formation at low dose rates10.1109/tns.2002.805387 ↗