Microstructure and magnetism of Ga+-irradiated IrMn-based spin-valve multilayered film
Source abstract
Abstract
An IrMn top-nailed spin-valve multilayer film was synthesized using direct-current magnetron sputtering on a naturally oxidized silicon substrate. The multilayered film microstructure and magnetism were analyzed using x-ray diffraction, transmission, and atomic force microscopies as well as vibrating sample magnetometry as functions of ion irradiation. The reverse saturation field residence time of the spin-valve multilayered sample was used to assess its magnetic stability. Ga+ distribution in the layers after irradiation was also simulated using the SRIM2003 package. Ga+ irradiation weakened the intensity of the (111) peak of the antiferromagnetic IrMn (111) layer, decreased surface roughness as well as exchange bias field and pinned layer coercive force, while increasing the free layer coercive force. However, the multilayer exchange bias field of the spin-valve film under the reverse saturation field after Ga+ irradiation did not change with time.
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Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Physics of Superconductivity and Magnetism
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology , Kunming 650093, China and , Kunming 650093, China
Engineering Research Center of Metallurgical Energy Conservation and Emission Reduction, Ministry of Education, Kunming University of Science and Technology , Kunming 650093, China and , Kunming 650093, China
Funding
Yunnan Province Ten Thousand Talents Plan Young Talents Training Fund · Applied Basic Research Program of Yunnan Province · School Talent Cultivation Foundation Funding Prokect
References (30)
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