Memristor switching and integration in ensembles of silicon nanocrystallites

We suggest a memristor device that is based on ensembles of Si nanocrystallites that are embedded in an SO2 matrix, for which we show that its operation is well accounted for by the theory of space charge limited currents. This operation consists of a memristive film that exhibits electronic charge integration properties as well as a potential to provide a quantum confinement controlled spiking behavior. As such, the present system is probably the closest available two-terminal electronic film analog that may imitate the neuron’s function. This system can be considered then, not only as “purely electronic” and “bio-realistic” but also as having the great advantage of being compatible with the silicon microelectronic technology. Corresponding devices have the potential to become practical by their downscaling, on the one hand, and by providing a controllable spiking mechanism on the same device, on the other hand.