STT-MRAM error correction technology based on LDPC coding
Source abstract
Abstract
Spin transfer magnetoresistive random access memory (STT-MRAM) shows potential applications with the properties of non-volatility, low power consumption and high write/read speed. With the maturity of the STT-MRAM process, it has gradually entered the mass production stage. Reliability will be an important factor limiting the development of this device. Error correction technology is highly required to be developed on this specific memory circuit. In this paper, a combination of low density parity check (LDPC) is used on STT-MRAM, in which the encoding constructs a no 4-girth check matrix. In its fulfillment, the decoded method combines soft decision and hard decision. The simulation results demonstrate that the LDPC shows promising application scenario for STT-MRAM error correction, especially for large-capacity storage arrays.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Advanced Data Storage Technologies · Error Correcting Code Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Internet of Things Engineering, Jiangnan University 1 , No. 1800 Lihu Avenue, Wuxi 214122, China
Jiangsu Key Construction Laboratory of IoT Application Technology, Wuxi Taihu University 2 , Wuxi 214064, China
Funding
Jiangsu Key Construction Laboratory of IOT Application Technology · National Natural Science Foundation of China
References (14)
Show source-provided references
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