Direct evaluation method to measure permittivity and conductivity of thin layers via wave approach in the THz region
Source abstract
Abstract
The direct evaluation method for measuring the permittivity and conductivity of thin layers was proposed via the wave approach in the terahertz (THz) region. The terahertz time-domain spectroscopy (THz-TDS) was employed for performing experiments with thin dielectric layers. The proposed method takes advantage of the wave prediction for propagated THz waves in the thin layer. The transient and spectral responses of the THz waves propagated in the thin layer were predicted directly through the proposed wave approach. The numerical procedures utilizing the predicted waves were presented to derive the complex wavenumber in the THz region, which is composed of the permittivity and conductivity. The derived properties were verified by comparing with the measured behaviors in time and frequency domains. The proposed numerical procedures allow us to measure precisely the complex dielectric property of the thin layer without any pre-estimation for layer inner conditions.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Terahertz technology and applications · Microwave and Dielectric Measurement Techniques · Photonic Crystals and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Mechanical Engineering, Hanyang University 1 , 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, South Korea
Samsung Electronics Co. 2 , 158 Baebang-ro, Asan-si, Chungcheongnam-do 31489, South Korea
Department of Electrical Engineering, Hanyang University 3 , 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, South Korea
References (36)
Show source-provided references
1. Infrared Phys. · 1969 · 9 · 14110.1016/0020-0891(69)90022-0 ↗
2. Appl. Phys. Lett. · 2007 · 91 · 06290610.1063/1.2768002 ↗
3. Phys. Rev. · 1951 · 83 · 12110.1103/physrev.83.121 ↗
4. Compos. Struct. · 2017 · 163 · 1310.1016/j.compstruct.2016.12.019 ↗
5. NDT&E Int. · 2015 · 75 · 2610.1016/j.ndteint.2015.06.003 ↗
6. IEEE Instrum. Meas. Mag. · 2007 · 10 · 2610.1109/mim.2007.364985 ↗
7. IEEE Trans. Microwave Theory Tech. · 2006 · 54 · 399510.1109/tmtt.2006.883655 ↗
8. IEEE Trans. Microwave Theory Tech. · 1981 · 29 · 6210.1109/tmtt.1981.1130288 ↗
9. J. Nondestr. Eval. · 2016 · 35 · 710.1007/s10921-015-0322-8 ↗
10. Compos. Struct. · 2004 · 66 · 53310.1016/j.compstruct.2004.04.076 ↗
11. J. Electromagn. Waves Appl. · 2011 · 25 · 210010.1163/156939311798072153 ↗
12. Appl. Opt. · 2017 · 56 · 328710.1364/ao.56.003287 ↗
13. Opt. Express · 2003 · 11 · 254910.1364/oe.11.002549 ↗
14. J. Eur. Opt. Soc.–Rapid Publ. · 2007 · 2 · 0701310.2971/jeos.2007.07013 ↗
15. Compos. Sci. Technol. · 2010 · 70 · 47210.1016/j.compscitech.2009.11.022 ↗
16. J. Nondestr. Eval. · 2017 · 36 · 3410.1007/s10921-017-0414-8 ↗
17. Phys. Med. Biol. · 2002 · 47 · 366710.1088/0031-9155/47/21/301 ↗
18. Appl. Phys. Lett. · 2006 · 89 · 22191110.1063/1.2397564 ↗
19. Polym. Test. · 2010 · 29 · 20910.1016/j.polymertesting.2009.11.003 ↗
20. J. Appl. Phys. · 2017 · 122 · 23090110.1063/1.5007683 ↗
21. J. Infrared, Millimeter, Terahertz Waves · 2013 · 34 · 15210.1007/s10762-012-9949-z ↗
22. J. Appl. Phys. · 2019 · 125 · 14410110.1063/1.5052638 ↗
23. Semicond. Sci. Technol. · 2016 · 31 · 10300310.1088/0268-1242/31/10/103003 ↗
24. J. Appl. Phys. · 2011 · 109 · 04350510.1063/1.3549120 ↗
25. Opt. Express · 2014 · 22 · 1247510.1364/oe.22.012475 ↗
26. Appl. Opt. · 2008 · 47 · 325410.1364/ao.47.003254 ↗
27. J. Infrared, Millimeter, Terahertz Waves · 2014 · 35 · 94910.1007/s10762-014-0095-7 ↗
28. J. Micromech. Microeng. · 2015 · 25 · 09500710.1088/0960-1317/25/9/095007 ↗
29. Compos. Struct. · 2016 · 156 · 33810.1016/j.compstruct.2015.09.055 ↗
30. NDT&E Int. · 2010 · 43 · 10610.1016/j.ndteint.2009.09.005 ↗
31. J. Infrared, Millimeter, Terahertz Waves · 2016 · 37 · 113910.1007/s10762-016-0303-8 ↗
32. 1986
33. 2004
34. J. Sound Vib. · 2005 · 288 · 5710.1016/j.jsv.2004.12.019 ↗
35. 1996
36. 2009