Fabrication of graphene-like carbon films on 6H-SiC substrates via chlorination-annealing at low temperature
Source abstract
Abstract
Graphene-like carbon films have been fabricated by annealing carbide-derived carbons on 6H-SiC (0001¯) at lower temperature in Ar ambience. Those films show a moderate interaction with substrates and an ordered stacking along c-axis and exhibit the same Raman spectra as that of epitaxial graphene on SiC. This carbon film growth process developed here will provide a new approach to obtain graphene epitaxially grown on SiC substrate at lower cost compared with the traditional access.
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Research context
OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · Boron and Carbon Nanomaterials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University 1 , Xi’an 710071, China
School of Physics and Optoelectronic Engineering, Institute of Electric Wave, Xidian University 2 , Xi’an 710071, China
SICC Co., Ltd 3 , Jinan 250018, China
Funding
National Natural Science Foundation of China · Chinese Universities Scientific Fund
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