Room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate
Source abstract
Abstract
Single-stack InAsSb self-assembled quantum dashes (QDashes) laser grown by metalorganic vapor phase epitaxy based on InP (001) substrate is reported. High-quality InAsSb quantum dashes have been acquired under the optimized growth conditions, such as substrate temperature, growth rate, deposition thickness and V/III ratio. Surface QDashes morphologies have been characterized by atomic force microscopy whereas the ones buried in active region have been investigated by transmission electron microscope with high resolution X-ray Energy Dispersive Spectroscopy to confirm the antimony composition. Double channel waveguide laser with 40 μm width ridge has been fabricated by standard optical lithography and wet etching. Pulsed room temperature operation demonstrates the wavelength from 1.72 to 1.79 μm for different injection currents. In addition, the laser peak output power can exceed 600 mW with 12.8% of differential quantum efficiency and even under continuous wave operation, the maximum optical power still remains 26 mW.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices 1 , P.O. Box 912, Beijing 100083, People’s Republic of China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 2 , Beijing 100049, China
Funding
National Key Research and Development Program · National Natural Science Foundation of China
References (30)
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