journal article·2018-12Open access

Electron-interface-phonon interactions and its ternary effects on in ZnS/CdxZn1-xS core-shell heterostructures

Wen Deng Huang, Li Fu Bao, Ya Jie Ren, Ke Zhou, Zhaolin Yuan

AIP Advances· Volume 8· Issue 12

Abstract

Within the framework of dielectric continuum mode (DCM), random-element isodisplacement model (REIM) and standard quantization procedure, the electron-interface-phonon interactions and its ternary effects in ZnS/CdxZn1-xS core-shell heterostructures are investigated. The dispersion curves, the electron-phonon couplings and its ternary mixed crystal effects of interface optical (IO) phonons in ZnS/CdxZn1-xS core-shell heterostructures are calculated and discussed in detail. The results indicate that the IO phonons are more dispersive in low quantum number. With the increase of the cadmium element concentration, the IO phonon frequencies decrease linearly in high frequency range (HF-range), and decreases non-linearly in low frequency range (LF-range). The numerical results also indicate that the IO phonons with lower quantum number play a significant role in electron-phonon interactions. The electron-phonon coupling strengths increase linearly in HF-range, and increase non-linearly in LF-range with the increasing cadmium element concentration. The IO phonons in HF-range have prominent contributions to electron-phonon interactions.
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Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · ZnO doping and properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, School of Physics and Telecommunication Engineering, Shaanxi University of Technology, Hanzhong 723001, China

Shaanxi Key Laboratory of Catalysis, College of Chemistry and Environmental Science, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, P.R. China

Funding

National Natural Science Foundation of China

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