Electron-interface-phonon interactions and its ternary effects on in ZnS/CdxZn1-xS core-shell heterostructures
Source abstract
Abstract
Within the framework of dielectric continuum mode (DCM), random-element isodisplacement model (REIM) and standard quantization procedure, the electron-interface-phonon interactions and its ternary effects in ZnS/CdxZn1-xS core-shell heterostructures are investigated. The dispersion curves, the electron-phonon couplings and its ternary mixed crystal effects of interface optical (IO) phonons in ZnS/CdxZn1-xS core-shell heterostructures are calculated and discussed in detail. The results indicate that the IO phonons are more dispersive in low quantum number. With the increase of the cadmium element concentration, the IO phonon frequencies decrease linearly in high frequency range (HF-range), and decreases non-linearly in low frequency range (LF-range). The numerical results also indicate that the IO phonons with lower quantum number play a significant role in electron-phonon interactions. The electron-phonon coupling strengths increase linearly in HF-range, and increase non-linearly in LF-range with the increasing cadmium element concentration. The IO phonons in HF-range have prominent contributions to electron-phonon interactions.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · ZnO doping and properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, School of Physics and Telecommunication Engineering, Shaanxi University of Technology, Hanzhong 723001, China
Shaanxi Key Laboratory of Catalysis, College of Chemistry and Environmental Science, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, P.R. China
Funding
National Natural Science Foundation of China
References (31)
Show source-provided references
1. Harrison P. · 201610.1002/9781118923337 ↗
2. 10.1016/j.jpcs.2016.12.01110.1016/j.jpcs.2016.12.011 ↗
3. 10.1039/c7cc05537d10.1039/c7cc05537d ↗
4. 10.1088/0957-4484/27/29/29560410.1088/0957-4484/27/29/295604 ↗
5. 10.1016/j.physe.2014.11.01810.1016/j.physe.2014.11.018 ↗
6. 10.1088/0022-3727/44/7/07510110.1088/0022-3727/44/7/075101 ↗
7. 10.1021/jacs.7b0232010.1021/jacs.7b02320 ↗
8. 10.1063/1.474817310.1063/1.4748173 ↗
9. 10.1103/physrevb.68.16533510.1103/physrevb.68.165335 ↗
10. 10.1016/j.ssc.2006.04.00910.1016/j.ssc.2006.04.009 ↗
11. 10.1103/physrevb.71.24532410.1103/physrevb.71.245324 ↗
12. Stroscio M. A. · 200110.1017/CBO9780511534898 ↗
13. 10.1002/pssb.222141021710.1002/pssb.2221410217 ↗
14. 10.1063/1.487154410.1063/1.4871544 ↗
15. 10.1063/1.176961010.1063/1.1769610 ↗
16. 10.1103/physrevb.58.1528310.1103/physrevb.58.15283 ↗
17. Born M. · 1954
18. 10.1103/PhysRevB.72.01430610.1103/PhysRevB.72.014306 ↗
19. 10.1002/pssb.222140011310.1002/pssb.2221400113 ↗
20. 10.1002/pssc.20056464210.1002/pssc.200564642 ↗
21. 10.1103/physrevb.44.185010.1103/physrevb.44.1850 ↗
22. 10.1016/j.spmi.2018.02.01510.1016/j.spmi.2018.02.015 ↗
23. 10.1002/pssb.222143021110.1002/pssb.2221430211 ↗
24. 10.1016/j.physleta.2014.06.02310.1016/j.physleta.2014.06.023 ↗
25. 10.1103/physrevb.44.346310.1103/physrevb.44.3463 ↗
26. 10.1002/pssb.222141011210.1002/pssb.2221410112 ↗
27. Adachi S. · 200910.1002/9780470744383 ↗
28. 10.1016/j.spmi.2004.11.00210.1016/j.spmi.2004.11.002 ↗
29. 10.1021/jp506307q10.1021/jp506307q ↗
30. 10.1016/j.physe.2013.02.00910.1016/j.physe.2013.02.009 ↗
31. Xu M. · Phys. Lett. A · 2014 · 378 · 338210.1016/j.physleta.2014.09.036 ↗