Publisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)]
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Source: openalex_inverted_index · Quality: short
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OpenAlex topics: GaN-based semiconductor devices and materials
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Affiliations
Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology 1 , Swabi 23640, Pakistan
Faculty of Science and Technology, Meijo University 2 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Department of Mathematics, COMSATS Institute of Information Technology 3 , 47040 Wah Cantt, Pakistan
College of Computer and Information Sciences, Prince Sultan University 4 , Riyadh 11586, Saudi Arabia
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