journal article·2018-02-01Open access

A new theoretical technique to study the temperature variation of electrical conductivity as applied to α-quaterthiophene (α-4T) thin films

V. Sasidharan, Divya K. Nair, C. M. Joseph, C. S. Menon, K. Shreekrishna Kumar

AIP Advances· Volume 8· Issue 2

Abstract

α-4T thin films of various thicknesses are prepared by thermal evaporation method. The electrical conductivity (σ) of as deposited α-4T thin films of thicknesses 50 nm, 100 nm and 200 nm have been measured using Hall measurement system (HMS). Using the measured values of conductivity and energy gap, the constant σ0 has been estimated for thin films of various thicknesses. Thus, the electrical conductivity of the thin films of 50 nm, 100 nm and 200 nm have been estimated for various temperatures (T). Ln (σ) vs. 1000/T plots for thin films of various thicknesses have been drawn. The conductivity is found to decrease with increase in thickness of the thin film, as it changes from 50 nm to 200 nm.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Semiconductor materials and interfaces · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Technology and Applied Sciences, Mahatma Gandhi University, Pullarikunnu Campus 1 , Malloosserry P.O., Kottayam, Kerala 686041, India

Dayananda Sagar College of Engineering 2 , Kumaraswamy Layout, Bangalore, Karnataka 560 078, India

School of Pure and Applied Physics, Mahatma Gandhi University 3 , Priyadarsini Hills P.O., Kottayam, Kerala 686 560, India

References (40)

Show source-provided references
1. Chem. Lett. · 2007 · 36 · 57810.1246/cl.2007.578 ↗
2. Nature · 1999 · 401 · 68510.1038/44359 ↗
3. Science · 1998 · 280 · 174110.1126/science.280.5370.1741 ↗
4. Adv. Mater. · 2005 · 17 · 114110.1002/adma.200401660 ↗
5. J. Mater. Chem. · 2000 · 10 · 57110.1039/a908312j ↗
6. Nat. Mater. · 2006 · 5 · 32810.1038/nmat1612 ↗
7. Appl. Phys. Lett. · 1996 · 69 · 410810.1063/1.117834 ↗
8. Mol. Cryst. Liq. Cryst. · 1989 · 171 · 287
9. Coord. Chem. Rev. · 1996 · 156 · 23710.1016/s0010-8545(96)01238-6 ↗
10. J. Phys. Chem. B · 1997 · 101 · 1310.1021/jp961231o ↗
11. Jpn. J. Appl. Phys. · 1996 · 35 · 611010.1143/jjap.35.6110 ↗
12. J. Am. Chem. Soc. · 1995 · 117 · 955110.1021/ja00142a025 ↗
13. J. Chem. Soc. · 1993 · 115 · 1215810.1021/ja00078a064 ↗
16. J. Mater. Chem. · 1997 · 7 · 36910.1039/a605274f ↗
17. 1956
18. Chem. Mater. · 2003 · 15 · 177810.1021/cm020866z ↗
19. J. Am. Chem. Soc. · 2003 · 125 · 941410.1021/ja035143a ↗
20. Adv. Mater. Chem. · 2003 · 15 · 3310.1002/adma.200390003 ↗
21. Adv. Mater. · 2005 · 17 · 234010.1002/adma.200500263 ↗
22. J. Phys. Chem. B · 2000 · 104 · 67110.1021/jp992853n ↗
24. Adv. Mater. · 1993 · 5 · 89610.1002/adma.19930051204 ↗
25. Angew. Chem. Int. Ed. · 2007 · 46 · 167910.1002/anie.200602653 ↗
26. New. J. Chem. · 2003 · 27 · 78310.1039/b300694h ↗
27. J. Mater. Chem. · 2003 · 13 · 80710.1039/b208742a ↗
28. J. Appl. Phys. · 2002 · 91 · 570610.1063/1.1465510 ↗
29. Adv. Mater. · 1993 · 5 · 92210.1002/adma.19930051210 ↗
30. Synth. Met. · 1994 · 63 · 5710.1016/0379-6779(94)90249-6 ↗
31. Adv. Mater. · 2006 · 18 · 303310.1002/adma.200601230 ↗
32. J. Am. Chem. Soc. · 2006 · 128 · 345910.1021/ja058178e ↗
33. Appl. Phys. Lett. · 2006 · 89 · 103524-110.1063/1.2337859 ↗
34. J. Mater. Chem. · 2006 · 16 · 87410.1039/b515657b ↗
35. Chem. Mater. · 2004 · 16 · 518710.1021/cm048961q ↗
36. Adv. Mater. · 2003 · 15 · 193910.1002/adma.200305168 ↗
37. J. Acc. Chem. Res. · 2001 · 34 · 35910.1021/ar990114j ↗
38. 2002
39. 2000 · 11
40. Appl. Phys. Lett. · 2002 · 8010.1063/1.1475361 ↗