journal article·2018-01-01Open access

Elevated-temperature luminescence measurements to improve spatial resolution

Mariusz Pluska, Andrzej Czerwinski

AIP Advances· Volume 8· Issue 1

Abstract

Various branches of applied physics use luminescence based methods to investigate light-emitting specimens with high spatial resolution. A key problem is that luminescence signals lack all the advantages of high locality (i.e. of high spatial resolution) when structures with strong built-in electric field are measured. Such fields exist intentionally in most photonic structures, and occur unintentionally in many other materials. In this case, as a result of beam-induced current generation and its outflow, information that indicates irregularities, nonuniformities and inhomogeneities, such as defects, is lost. We show that to avoid nonlocality and enable truly local luminescence measurements, an elevated measurement temperature as high as 350 K (or even higher) is, perhaps surprisingly, advantageous. This is in contrast to a widely used approach, where cryogenic temperatures, or at least room temperature, are recommended. The elevated temperature of a specimen, together with the current outflow being limited by focused ion beam (FIB) milling, is shown to improve the spatial resolution of luminescence measurements greatly. All conclusions drawn using the example of cathodoluminescence are useful for other luminescence techniques.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Electron Technology , Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland

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