Publisher’s Note: “Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field” [AIP Advances 7, 015116 (2017)]
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Abstract
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Source: openalex_inverted_index · Quality: short
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OpenAlex topics: 2D Materials and Applications
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Affiliations
Department of Physics, Shanghai Polytechnic University 1 , Shanghai 201209, China
Department of Electronic Engineering, Shang Hai Jian Qiao University 2 , Shanghai 201306, China
School of Microelectronic of Fudan University 3 , Shanghai 200433, China
Key Laboratory of Polar Materials and Devices, East China Normal University 4 , Shanghai 200241, China
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