Erratum: “Preparation, thermoelectric properties, and crystal structure of boron-doped Mg2Si single crystals” [AIP Advances 10, 035115 (2020)]
Abstract
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Heusler alloys: electronic and magnetic properties
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Affiliations
Department of Applied Physics, Graduate School of Engineering, Tohoku University 1 , Sendai 980-8579, Japan
Institute of Quantum Beam Science, Graduate School of Science and Engineering, Ibaraki University 2 , Tokai 319-1106, Japan
Department of Physical Science and Engineering, Nagoya Institute of Technology 3 , Nagoya 466-8555, Japan
Frontier Research Institute for Materials Science, Nagoya Institute of Technology 4 , Nagoya 466-8555, Japan
Department of Computer and Network Engineering, Graduate School of Information Sciences, Hiroshima City University 5 , Hiroshima 731-3194, Japan
Materials and Life Science Division, J-PARC Center 6 , Tokai 319-1195, Japan