Erratum: “Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode” [AIP Adv. 8, 115011 (2018)]
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Source: openalex_inverted_index · Quality: short
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OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials
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Affiliations
Research Center for Integrated Quantum Electronics, Hokkaido University , Sapporo 060-0813, Japan
References (1)
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1. Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode10.1063/1.5057401 ↗