The effect of ion irradiation on dephasing of coherent optical phonons in GaP
Source abstract
Abstract
The dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of defects by means of Ga-ion irradiation. The maximum dephasing time observed at room temperature is 9.1 ps at a Ga+ ion dose of 1013/cm2, which is significantly longer than the value of 8.3 ps for GaP before ion irradiation. The longer dephasing time is explained in terms of the suppression of electron-LO-phonon scattering by the presence of defect-induced deep levels.
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Research context
OpenAlex topics: Photorefractive and Nonlinear Optics · Spectroscopy and Quantum Chemical Studies · Laser-Matter Interactions and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba 1 , 1-1-1 Tennodai, Tsukuba 305-8573, Japan
Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology 2 , Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan
Department of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba 3 , 1-1-1 Tennodai, Tsukuba 305-8573, Japan
Funding
Core Research for Evolutional Science and Technology
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