An improved analytical model for the statistics of SET emergence point in HfO2 memristive device
Abstract
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Mechatronics Engineering, Harbin Institute of Technology 1 , Harbin 150001, China
Hubei Key Laboratory of Applied Mathematics, Faculty of Physics and Electronic Science, Hubei University 2 , Wuhan 430062, China
Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences 3 , Beijing 100029, China
Departamentd’Enginyeria Electrònica, Universitat Autònoma de Barcelona 4 , Bellaterra 08193, Spain
School of Microelectronics, University of Science and Technology of China 5 , Hefei 230027, China
Funding
National Natural Science Foundation of China