journal article·2018-08-01Open access

Deep levels induced optical memory effect in thin InGaN film

B. B. Wang, J. J. Zhu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. Yang, W. Liu, F. Liang, S. T. Liu, Y. Xing, L. Q. Zhang, M. Li

AIP Advances· Volume 8· Issue 8

Abstract

An optical memory effect is found in a 20 nm InGaN film. With increasing illumination time, photoluminescence (PL) intensity of InGaN rises at first and then falls. We present that this effect is caused by carriers capture in deep levels near interfaces between GaN and InGaN. Firstly, carriers captured by deep levels near the interfaces reduces the band inclination in InGaN. This cause the rise of PL intensity. Secondly, more and more captured carriers may form anti-shielding, which enhances band inclination and results in the decrease of PL intensity. Carriers captured in previous illumination can remain for a long time after illumination is blocked, which make InGaN show an optical memory effect.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, China

College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science 2 , Beijing 100049, China

School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences 3 , Beijing 100049, China

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 4 , Suzhou 215125, China

Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics 5 , Chengdu 610200, China

Funding

National Key R&D Program of China · Science Challenge Project · National Natural Science Foundation of China · China Postdoctoral Science Foundation

References (16)

Show source-provided references
1. IEEE Photonics Technol. Lett. · 2006 · 18 · 202910.1109/lpt.2006.883322 ↗
2. Journal of Vacuum Science & Technology A Vacuum Surfaces & Films · 2015 · 33 · 06150210.1116/1.4927388 ↗
3. Japanese Journal of Applied Physics.pt Letters · 2014 · 34 · L797
4. Superlattices Microstruct. · 2008 · 43 · 110.1016/j.spmi.2007.05.001 ↗
5. MRS Proceedings · 1992 · 242 · 15410.1557/proc-242-451 ↗
6. Appl. Phys. Lett. · 1997 · 71 · 23410.1063/1.120414 ↗
7. Opt. Express · 2009 · 17 · 2285510.1364/oe.17.022855 ↗
8. Phys. Rev. Lett. · 1997 · 78 · 111010.1103/physrevlett.78.1110 ↗
9. Phys. Rev. Lett. · 1985 · 54 · 102310.1103/physrevlett.54.1023 ↗
10. Appl. Surf. Sci. · 2017 · 392 · 25610.1016/j.apsusc.2016.08.075 ↗
11. Appl. Phys. Lett. · 2006 · 88 · 06111810.1063/1.2172144 ↗
12. Proceedings of SPIE - The International Society for Optical Engineering · 2007 · 781 · 64860J
13. J. Cryst. Growth · 2007 · 298 · 24610.1016/j.jcrysgro.2006.10.079 ↗
14. Appl. Phys. Lett. · 2011 · 98 · 10210410.1063/1.3562008 ↗
15. Physica B · 1999 · 273-274 · 2410.1016/s0921-4526(99)00399-3 ↗
16. Materials Science and Engineering: R: Reports · 2015 · 94 · 110.1016/j.mser.2015.05.001 ↗