Characterization of high κ Al2O3 based metal-insulator-metal antifuse
Source abstract
Abstract
A new metal-insulator-metal (MIM) antifuse structure was fabricated with the amorphous Al2O3 synthesized by atomic layer deposition (ALD) as the dielectric and with either Ti or TiN as top electrode. The device with Ti electrode exhibits lower breakdown voltage compared to the TiN counterpart due to the more oxygen vacancies in Ti electrode antifuse. During breakdown, the effective programming current is found to be several orders larger than the compliance current, and resulting in extremely low on-state resistance. A hypothesis based on the electron trap of oxygen vacancy in the bulk of Al2O3 is proposed to explain this breakdown characteristics.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Microelectronics, Chinese Academy of Sciences 1 , Beijing 100029, China
University of Chinese Academy of Sciences 2 , Beijing 100049, China
Zhuhai Chuangfeixin Technology Co., Ltd 3 , Zhuhai, Guangdong 519000, China
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