Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
Source abstract
Abstract
A new technique which uses an ultra-thin silicon interlayer in germanium photodetectors for junction engineering is demonstrated. A 5 nm epitaxially grown silicon layer was effective in preventing phosphorus diffusion into bulk Ge at 625 °C. Abrupt junction profile was achieved in thin 250 nm Ge PDs which led to improved bandwidth performance during low voltage operations (at 1V or less).
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Research context
OpenAlex topics: Photonic and Optical Devices · Semiconductor Quantum Structures and Devices · Silicon Nanostructures and Photoluminescence
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Affiliations
Institute of Microelectronics , A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore Science Park II, Singapore 117685, Singapore
References (11)
Show source-provided references
1. IEEE J. Sel. Top. Quantum Electron. · 2010 · 16 · 30710.1109/JSTQE.2009.2028657 ↗
2. Opt. Express · 2011 · 19 · 504010.1364/OE.19.005040 ↗
3. Opt. Express · 2011 · 19 · 1096710.1364/OE.19.010967 ↗
4. Opt. Express · 2012 · 20 · 109610.1364/OE.20.001096 ↗
5. Applied Physics Letters · 2003 · 83 · 327510.1063/1.1618382 ↗
6. Appl. Phys. Lett. · 2005 · 87 · 09190910.1063/1.2037861 ↗
7. J. Appl. Phys. · 2012 · 112 · 03450910.1063/1.4745020 ↗
8. Opt. Express · 2012 · 2 · 146210.1364/OME.2.001462 ↗
9. SPIE · 2008 · 6897 · 68970L10.1117/12.766815 ↗
10. J. Crystal Growth · 2005 · 274 · 9010.1016/j.jcrysgro.2004.10.042 ↗
11. Appl. Phys. Lett. · 2009 · 94 · 22351510.1063/1.3151913 ↗