Young’s modulus of V3O5 thin films

Vanadium oxide V3O5 exhibits an insulator-to-metal transition (IMT) near 430 K, which is the highest value for all vanadium oxides exhibiting IMTs. This makes it interesting for advanced electronic applications. However, the properties of V3O5 have been little studied, and, in particular, there are no reports of experimentally determined mechanical properties. In this work, Young’s modulus of sputter-deposited V3O5 thin films has been determined by measuring the fundamental resonant frequency of V3O5-coated silicon microcantilevers using a laser beam deflection technique. After deposition, the films were characterized by x-ray diffraction, resistivity measurements, and atomic force microscopy. The value of Young’s modulus experimentally determined for V3O5 was 198 ± 14 GPa, which is slightly lower than the computationally derived values for bulk crystal V3O5.