journal article·2022-08-01Open access

Physical mechanism of aluminum contamination presented in H2O2 plasma sterilization

Ruixiang Hou, Ziang Xie, Xiaomin Li, Yan Zhang, Chuangnian Zhang, Hongwei Shi, Yu Bai, Yang Zhang, Muhua Zhao, Ang Gao, Cui Zheng, Zifang Guo

AIP Advances· Volume 12· Issue 8

Abstract

In this paper, it is first demonstrated that Aluminum (Al) contamination is present; H2O2 plasma sterilization is widely used for sterilization of surgical instruments. The contamination amount of Al can reach as high as 7.9 × 1012 atoms/cm2. Aluminum is well known as a harmful element to human health, which may damage bones and the brain. During the use of the surgical instruments after H2O2 plasma sterilization in surgery, the contaminated Al may enter and reside in the human body and threaten the health and even life safety. Therefore, it is necessary to study the Al contamination present in H2O2 plasma sterilization to arouse public attention and take countermeasures. The physical mechanism of the Al contamination presented in H2O2 plasma sterilization is diffusion. In our previous study, we developed two physical models for calculating the diffusion coefficient. In this study, both models are used to calculate the diffusion coefficient of the contaminated Al in sterilized Si samples. From the calculation results, it is inferred that the contamination mechanism of Al presented in H2O2 plasma sterilization is closer to the model, where the diffusion coefficient value is a function of the plasma treatment time.
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Research context

OpenAlex topics: Aluminum Alloy Microstructure Properties · Particle Dynamics in Fluid Flows · Metallurgical Processes and Thermodynamics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

SINOPEC (Beijing) Research Institute of Chemical Industry Co., Ltd. 1 , Beijing 100013, People’s Republic of China

Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing 2 , Beijing 100083, People’s Republic of China

SINOPHARM Shenzhen Legend Medical MSSC 3 , Shenzhen 518000, People’s Republic of China

Institute of Biomedical Engineering, Chinese Academy of Medical Science and Peking Union Medical College 4 , Tianjin 300192, People’s Republic of China

Funding

SINOPEC Research Institute of Chemical Industry Co., Ltd.

References (18)

Show source-provided references
1. Ophthalmologie · 1993 · 90 · 754
2. Ophthalmic Res. · 1995 · 27 · 12410.1159/000267857 ↗
3. Plasma Sources Sci. Technol. · 1994 · 3 · 24610.1088/0963-0252/3/3/002 ↗
4. J. Vac. Sci. Technol. A · 1990 · 8 · 172610.1116/1.576838 ↗
5. Plasma Sources Sci. Technol. · 1994 · 3 · 25210.1088/0963-0252/3/3/003 ↗
6. In situ laser diagnostic studies of plasma generated particulate contamination10.1116/1.576175 ↗
7. Trapping and behavior of particulates in a radio frequency magnetron plasma etching tool10.1116/1.578453 ↗
8. Particle contamination formation in magnetron sputtering processes10.1116/1.580674 ↗
9. The risk assessment of effect of aluminum in drinking water on health10.1289/ehp.94102390 ↗
10. Aluminum and health
11. Aluminum and Alzheimer’s disease
12. Room-temperature plasma doping without bias power for introduction of Fe, Au, Al, Ga, Sn and In into Si10.1007/s00339-016-0477-x ↗
13. Doping Si, Mg and Ca into GaN based on plasma stimulated room-temperature diffusion10.1007/s00339-017-0989-z ↗
14. Ultra-shallow doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with very high surface concentrations based on plasma stimulated room-temperature diffusion10.1007/s11665-018-3782-z ↗
15. 1976
16. Room-temperature gettering of Au in Si wafers with surface defects under small dose γ-ray radiation10.1088/0022-3727/48/10/105101 ↗
17. Room-temperature diffusion and gettering of Au in silicon stimulated by MeV electron irradiation10.1088/0022-3727/48/27/275103 ↗
18. Ambient-temperature diffusion and gettering of Pt atoms in GaN with surface defect region under 60Co gamma or MeV electron irradiation10.1016/j.nimb.2017.10.028 ↗