Room temperature emission spectroscopy of GeSn waveguides under optical pumping
Source abstract
Abstract
Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%–6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. Comprehensive theoretical models for the waveguide emission power dependence were developed to reproduce experimental data and provide an understanding of the nonlinear power dependence.
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Research context
OpenAlex topics: Photonic and Optical Devices · Advanced Photonic Communication Systems · Mechanical and Optical Resonators
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electro-Optics and Photonics, University of Dayton 1 , Dayton, Ohio 45469, USA
Department of Physics, Arizona State University 2 , Tempe, Arizona 85287, USA
Department of Physics, University of Dayton 3 , Dayton, Ohio 45469, USA
School of Molecular Sciences, Arizona State University 4 , Tempe, Arizona 85287, USA
Funding
Air Force Office of Scientific Research (AFOSR) Young Investigator Award
References (27)
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