Influence of defects on silicon heterojunction solar cell efficiency: Physical model and comparison with data

Luca Zumbo; Jean-Francois Lerat; Carmelo Connelli; Claudio Colletti; Cosimo Gerardi; Salvatore Lombardo

doi:10.1063/5.0022983

journal article·2021-01-01Open access

Influence of defects on silicon heterojunction solar cell efficiency: Physical model and comparison with data

Luca Zumbo, Jean-Francois Lerat, Carmelo Connelli, Claudio Colletti, Cosimo Gerardi, Salvatore Lombardo

AIP Advances· Volume 11· Issue 1

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Source abstract

Abstract

We have studied the influence of defects on silicon heterojunction solar cell efficiency by a method based on the comparison of electroluminescence (EL) image data with a finite element circuit model of solar cell efficiency. For this purpose, a general curve that relates the solar cell efficiency to a parameter representative of the defect strength, i.e., the loss of VOC, ∆VOC, from EL maps is obtained, and it is shown that the efficiency can be predicted with a good degree of confidence.

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Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Photovoltaic System Optimization Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

CNR-IMM 1 , VIII Strada 5 Zona Industriale 95121, Catania, Italy

Dipartimento di Fisica e Astronomia, Università di Catania 2 , Via S. Sofia, 64, 95123 Catania, Italy

Univ. Grenoble Alpes, CEA, LITEN, DTS, LHET, INES 3 , F-38000 Grenoble, France

Enel Green Power, Contrada Blocco Torrazze Zona Industriale 4 , 95121 Catania, Italy

Funding

AMPERE Project

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